ETH Zürich

Thin Film Physics Group

ETH Zürich
Departement of Physics, Laboratory for Solid State Physics, ETH Zürich, Switzerland; located at Technopark Zürich

Overview IR-VECSEL

The VECSEL structure is very simple: a 3 pair DBR with the gain region on top. The active reagion can be a single active layer, or 3-9 QW. A 1.55 µm laser is used for optical pumping. The emission wavelength of IV-VI semiconductors shifts to shorter wavelength with increasing temperature. The stated maximum output power is corrected for window/lens losses. Temperatures are given as measured for the heatsink.
 

                    substrate

active
BaF2 Silicon(111)
PbTe, single layer
λ = 3.6 - 5.5 µm
CW: 4.2 mW @ 100 K
pulsed: 430 mW @ 100 K, up to 175 K
[1,2]
CW: 18 mW, up to 140 K
pulsed: 1.2 W @ 100 K, up to 25°C
[3,5,6,7]
PbTe, QW
λ = 4.7 µm
pulsed: 1 W @ 130 K
[x]
PbSe, single layer
λ = 4 - 6.5 µm
pulsed: 30 mW @ -20°C, up to > 60°C
[4]
pulsed: 400 mW @ 180 K, up to 240 K
[x]
PbSe, QW
λ = 3.1 - 4.7 µm
pulsed: 600 mW @ 100 K, up to 235 K
[6]
pulsed: up to 50°C
[8]
PbSnSe, layer & QW
λ = 6.7 - 9.5 µm
pulsed: 30 mW, up to 190 K
[x]
PbS, layer & DHS
λ = 3.9 - 2.8 µm
pulsed: 1.8 W @ 200 K
[x,x]
Tab.: Different VECSEL configurations.

 


Fig.: Achieved (in color) VECSEL emission wavelengths. For bulk materials the approximate heatsink temperatures are indicated.

 

[1] Appl. Phys. Lett. 91, 151102, 2007
[2] Optics Letters 33, 24, pp. 3010-3012, 2008
[3] Electronic Letters 44, 25, pp. 1467-1469, 2008
[4] Appl. Phys. Lett. 94, 201112, 2009
[5] Appl. Phys. Lett. 95, 241107, 2009
[6] Appl. Phys. B 100, 2, 2010
[7] Appl. Phys. Lett. 97, 151104, 2010
[8] J. Appl. Phys. 109, 093101, 2011

[x] not yet published, or only partial

updated 03.03.2011