Equipment and characterization techniques
4 chamber 3"-MBE-system (Molecular Beam Epitaxy)
- Epitaxy on 3"-Silicon and BaF2 substrates
- IIa-fluorides (CaF2, BaF2, SrF2)
- IV-VI (PbSnTe, PbEuTe, PbSrTe)
- IV-VI (PbSnSe, PbEuSe)
- II-VI (CdTe, CdS)
PVD (physical vapour deposition)
- 1 Balzers BAK 550 with e-beam source
- 4 small bell jar evaporation plants
Microscopy
- AFM, optional low temperature AFM microscopy
- Scanning electron microscope with EDX
- Nomarski light microscope
Microstructuring
- Spin-coating
- 3"-maskaliner
- Deep-UV photoresist polymerization equipment
- Wet etching equipment
- Plasmastripper
- Profilometer
Electrooptic test equipment
- Infrared sensors with closed cycle dewar 15K, I-V, C-V, spectral response
- LN2-dewar with 4 prober needles
- LN2-dewars for laser measurements
- IR Spectrophotometer
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