Thin Film Physics Group

208 D.L. Bätzner, A. Romeo, M. Döbeli, K. Weinert, H. Zogg, A.N. Tiwari
High energy irradiation properties of CdTe/CdS Solar cells
Conference Record of the 29th IEEE Photovoltaic Specialist Conference, New Orleans (2002) 982-985

207 G. Agostinelli, D.L. Bätzner, M. Burgelman
An alternative model for V, G and T dependence of CdTe solar cells IV characteristics
Conference Record of the 29th IEEE Photovoltaic Specialist Conference, New Orleans (2002) 744-747

206 F.-J. Haug, H. Zogg, A. N. Tiwari
11% efficiency CIGS superstrate solar cells without sodium precursor
Proc. 29th IEEE Photovoltaic Specialist Conference, 20-24 May 2002, New Orleans, USA, 728-731

205 O. Grimm, H. Anderhub, J.R. Bates, D. Bätzner, S. Baumgartner, A. Biland, C. Camps, M. Capell, V. Commichau, L. Djambazov, Y.-J. Fanchiang et al.
Design and construction of the prototype synchrotron radiation detector
Nuclear Instruments and Methods in Physics Research Section A 491 (1-2) (2002) 98-112

204 H. Anderhub, D. Baetzner, S. Baumgartner, A. Biland, C. Camps, M. Capell, V. Commichau, L. Djambazov, Y.-J. Fanchiang, G. Fluegge et al.
The Prototype Synchrotron Radiation Detector (PSRD)
Nuclear Instruments and Methods in Physics Research Section A 478 1-2 (2002) 123-124

203 M. Terheggen, H. Heinrich, G. Kostorz, F.-J. Haug, H. Zogg, A.N. Tiwar
Ga2O3 Segregation in Cu(In,Ga)Se2/ZnO Superstrate Solar Cells and its Impact on their Photovoltaic Properties
Thin Solid Films 403-404 (2002) 212-215

197 Hans Zogg, Karim Alchalabi, Dmitri Zimin
Two-dimensional monolithic lea-chalcogenide on active Si-substrate IR-FPA
Proc. SPIE 4820-47, 2002, pp. 429-435.

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2001

196 D. Rudmann, F.-J. Haug, M. Kaelin, G. Bilger, H. Zogg, A. N. Tiwari
Low temperature growth of CIGS thin films for flexible solar cells, Proc. Mat. Res. Soc. Symp. San Francisco Vol. 668, 2001, H3.8.1-6

195 A. Romeo, D. Baetzner, W. Hajdas, H. Zogg, A. N. Tiwari
Influence of proton irradiation and development of flexible CdTe solar cells on polyimide, Proc. Mat. Res. Soc. Symp. Vol. 668, 2001, H3.3.1-6

194 D. L. Bätzner, G. Agostinelli, A. Romeo, H. Zogg, A. N. Tiwari
Voltage dependent carrier collection in CdTe solar cells, Proc. Mat. Res. Soc. Symp. Vol. 668, 2001, H5.17.1-6

193 A. N. Tiwari, A. Romeo, D. Baetzner, H. Zogg
Flexible CdTe solar cells on polymer films, Progress in Photovoltaics:Research and Applications 9, 2001, p. 211.

192 L. Pasquali*, S. D.'Addato*, G. Selvaggi*, S. Nannarone*, N.S. Sokolov^#, S.M. Suturin^#, H. Zogg
Formation of CaF2 nanostructures on Si(001)
Nanotechnology 12, 2001, pp. 403-408.
   *INFM and Dept. of Physics, University of Modena, Italy
   ^#Ioffe Physico-Technical Institute, St. Petersburg, Russia

191  F.-J. Haug, D. Rudmann, A. N. Tiwari, H. Zogg, and G. Bilger,
Comparison of structural and electrical properties of Cu(In,Ga)_xSe_y for substrate and superstrate solar cells,
Thin Solid Films 403-404, 293-296, (2002)

190  M. Terheggen, H. Heinrich, G. Kostorz, F.-J. Haug, A. N. Tiwari, and H. Zogg
Diffusion of Gallium in Cu(In,Ga)_xSe_y/ZnO superstrate superstrate solar cells and its impact on the photovoltaic properties,
Thin Solid Films 403-404, 212-215, (2002)

189 Hans Zogg, Karim Alchalabi, Dmitri Zimin, Klaus Kellermann
Two-dimensional monolithic lead chalcogenide infrared sensor array on silicon read-out chip, in "Physics of Semiconductor Devices", V. Kumar, P.K. Basu, eds.,  pp. 21-27,
Allied Publishers LTD 2002 (Proc. 11th International Workshop on the Physics of Semiconductor Devices, IWPSD 2001, Delhi, Dec. 11-15. 2001, invited talk)

188 Hans Zogg, Karim Alchalabi, Dmitri Zimin, Klaus Kellermann
Lead chalcogenide on silicon infrared sensors:Focal plane array with 96 x 128 pixels on active Si-chip
Infrared Phys. Technol., to be published (Proc. 6th Int. Workshop on Advanced Infrared Technology and Applications, Siena, Sept. 17-19, 2001 invited)

187 H. Zogg, K. Alchalabi, D. Zimin
PbTe IRFPAs for low cost thermal imaging
Compound Semiconductors 7, Nr. 8 (September 2001), pp. 86-87.

186 D. Zimin, K. Alchalabi, H. Zogg
Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: Correlations between material and device properties Physica E, to be published (Proc. MSS 10, Linz, July 2001).

185 Karim Alchalabi, Dmitri Zimin, Klaus Kellermann, Hans Zogg
Lead chalcogenide on silicon infrared sensor arrays: Noise mechanisms and 2-d array on active chips
Jpn. J. Appl. Phys., suppl., 2001, to be published (Proc. ngs10, narrow gap semiconductor conference, Ishikawa, Japan, May 2001), invited

184 Karim Alchalabi, Dmitri Zimin, Hans Zogg, Werner Buttler
Heteroepitaxial 96 x 128 lead chalcogenide on silicon infrared focal plane array for thermal imaging
Proc. SPIE 4369 -41, (April 2001, in print)

183 Karim Alchalabi, Dmitri Zimin, and Hans Zogg
Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96 x 128 pixels
Electron Device Letters 22, 3 (March 2001), pp. 110-112.

182 F.-J. Haug, Zs. Geller, H. Zogg, C. Vignali, A. N. Tiwari
Influence of deposition conditions on the thermal stability of ZnO:Al films grown by RF magnetron sputtering, J. Vac. Sci. Tech. A19, 1 (Jan/Feb 2001), pp 171-174.

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  2000

181 D. L. Bätzner, A. Romeo, H. Zogg, A. N. Tiwari
Development of efficient and stable back contacts on CdTe/CdS solar cells
European Material Research Society 2000 Spring Meeting, 30 May-2 June 2000, Strasbourg,
Thin Solid Films (accepted for publication).

180 A. Romeo, D. Baetzner, H. Zogg, A. N. Tiwari
Influence of CdS growth process on the structural and photovoltaic properties of CdTe/CdS solar cells, Solar Energy Materials and Solar Cell 67, 2001, p. 311 .

179 D. L. Bätzner, R. Wendt, A. Romeo, H. Zogg, A. N. Tiwari
Effect of back contact metallization on the stability of CdTe/CdS solar cells, Proc. 16th European Photovoltaic Solar Energy Conference and Exhibition, 1-5 May 2000,
Glasgow, p. 353.

178 D. Rudmann, F.-J. Haug, M. Krejci, H. Zogg, A.N. Tiwari
Decelopment of Flexible Cu(In,Ga)Se2 solar cells on polymers with lift-off processes, Proc. 16th European Photovoltaic Solar Energy Conference and Exhibition, 1-5 May
2000, Glasgow, p. 298.

177 A. Romeo, D. Baetzner, H. Zogg, A. N. Tiwari
A comparison of the vacuum evaporated CdTe substrate and superstrate solar cells,, Proc. 16th European Photovoltaic Solar Energy Conference and Exhibition, 1-5 May
2000, Glasgow, p. 843.

176 F.-J. Haug, D. Rudmann, H. Zogg, A.N. Tiwari
Stability of transparent ZnO front contacts for Cu(In,Ga)Se2 superstrate solar cells, Proc. 16th European Photovoltaic Solar Energy Conference and Exhibition, 1-5 May
2000, Glasgow, p. 755.

175 P.R. Edwards, K. Durose, A. Romeo, D. L. Bätzner, A. N. Tiwari
Comparison of the microscopic electrical properties of sublimation and evaporation grown CdS/CdTe solar cells using lock-in EBIC, Proc. 16th European Photovoltaic Solar Energy Conference and Exhibition, 1-5 May 2000, Glasgow (in press).
 

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1999

174 H. Zogg, K. Alchalabi, D. Gössi
Epitaxial IV-VI-on-Si layers: Dislocation density reduction mechanisms and dependence on sensor device properties
Proceedings of the 9th International Conference on Narrow Gap Semiconductors ng9, Sept. 26- Oc. 1, 1999, eds: N. Puhlmann, H.-U.Müller, M. von Ortenberg, Magnetotransport - Humboldt University at Berlin, Sept. 26- Oc. 1, 1999, Germany

173 Press release Swiss National Science foundation (SNF),
"Bild des Monats": Weltrekord mit flexiblen Solarzellen
20. Dez. 1999, http://www.snf.ch/Newsframeset_e.html see e.g. Tages-Anzeiger 22. Dez. "Zürcher Solarzellen zum Rollen"

172 V. Nadenau*, H.W. Schock*; M. Krejci, F.-J. Haug, A.N. Tiwari, H. Zogg
Microstructure of Cu-rich CuGaSe2 thin films Diffusion-and-Defect-Data-Part-B-(Solid-State-Phenomena). vol.67-68; 1999; pp.397-401 (1999)
*Institut für phys. Elektronik, Universität Stuttgart

171 A.N. Tiwari, M. Krejci, F.-J. Haug, H. Zogg
Cu(In,Ga)xSey Epitaxial Layers and Polycrystalline Solar Cells
Physics of Semiconductor Devices Vol. I, Vikram Kumar, S.K. Agarval eds., Allied Publ. Ltd. New Delhi (Proc. 10th Int. Workshop on Physics of Semiconductor Devices IWPSD, Dec 1999, Delhi, India), pp. 1227-1234, 1999, invited

170 H. Zogg, K. Alchalabi, A.N. Tiwari,
Photovoltaic IV-VI on Silicon Infrared Devices for Thermal Imaging
Physics of Semiconductor Devices Vol. I, Vikram Kumar, S.K. Agarval eds., Allied Publ. Ltd. New Delhi (Proc. 10th Int. Workshop on Physics of Semiconductor Devices IWPSD, Dec 1999, Delhi, India), pp. 51- 56, 1999, invited

169 Martin Krejci, Ayodhya N. Tiwari
Solarzellen zum Aufkleben und Rollen
NZZ Neue Zürcher Zeitung, Beilage Technik, 3. Nov. 1999

168 F.-J. Haug, M. Krejci, A.N. Tiwari, H. Zogg
Solar energy - technologically advanced - economically profitable - ecologically compatible
Bi-monthly review of the Swiss-Japanese Chamber of commerce, Swiss-Japanese Journal 3/99, pp. 28-32

167 A.N. Tiwari, M. Krejci, F.-J. Haug, H. Zogg,
12.8% efficiency Cu(In,Ga)xSey solar cell on a flexible polymer sheet
Progress in Photovoltaics:Research and Applications, 7, 393 (1999).

166 H. Zogg
Photovoltaic IV-VI on silicon infrared devices for thermal imaging applications, in: Photodetectors: Material and devices IV (Photonics West San Jose CA, Jan. 1999) Proc. SPIE 3629, pp. 52-62,1999, invited

165 H. Zogg
Epitaxial Lead-Chalcogenide on Silicon Layers for Thermal Imaging Applications
Proc. Fourth International Conference on Material science and material properties for infrared optoelectronics, Kiev, Ukraine, Sept. 28 - Oct. 2, 1998, Proc. SPIE 3180, pp. 22-26, invited

164 A. N. Tiwari,  F.-J. Haug, M. Krejci,  H. Zogg,
Heteroepitaxy of CuInxSey: A review of the material and interface properties, Invited talk at the European Material Research Society 1999, Spring Meeting, 1-4 June 1999, Strasbourg, (France), Thin Solid Films 361, 34 (2000).

163  F.-J. Haug, M. Krejci,  H. Zogg, A. N. Tiwari
Characterization of CuGaxSey/ZnO for superstrate solar cells,presented at the European Material Research Society 1999 Spring Meeting, 1-4 June 1999, Strasbourg (France), Thin Solid Films 361, 34 (2000).

162 D. Baetzner, A. Romeo, H. Zogg, A. N. Tiwari
A study of the back contacts on CdTe/CdS solar cells, presented at the European Material Research Society 1999 Spring Meeting, 1-4 June 1999, Strasbourg (France), Thin Solid Films 361, 463 (2000).

161 A. Romeo, D. Baetzner, H. Zogg, A. N. Tiwari
Recrystallization in CdTe/CdS, presented at the European Material Research Society 1999 Spring Meeting, 1-4 June 1999, Strasbourg (France), Thin Solid Films 361, 420 (2000).

160 V. Nadenau, D. Hariskos, H.-W. Schock, M. Krejci, F.-J. Haug, A. N. Tiwari, H. Zogg, G. Kostorz
Microstructural study of the CdS/CuGaSe2 interfacial Region in CuGaSe2 thin film solar cells, Journal of Applied Physics 85, 534-542 (1999).

159 A.N. Tiwari, M. Krejci, F.-J. Haug, H. Zogg, V. Zelezny and V. Vorlicek
Heteroepitaxy of CuInxSey: Material for high efficiency and stable thin film solar cells, J. Cryst. Growth 201, 1057 (1999).

158 M. J. Furlong, M. Froment, M.C. Bernard, R. Cortes, A.N. Tiwari, M. Krejci, H. Zogg, and D. Lincot,
Aqueous solution epitaxy of CdS layers on CuInSe2, J. Cryst. Growth 193, 114(1998).

157 A.N. Tiwari, M. Krejci, F.-J. Haug, H. Zogg, M. Döbeli, V. Zelezny and V. Vorlicek, G. Lippold
Structural properties and identification of the In-rich phases of CuInxSey ,, Proc. 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, p581.

156 M. Krejci, A.N. Tiwari, F.-J. Haug, H. Zogg, and M. Döbeli
Investigations of the interfaces between substrate and epitaxial CuInxSey layers, Proc. 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, p585.

155 F.- J. Haug, A.N. Tiwari, M. Krejci, H. Zogg, V. Zelezny and V. Vorlicek
Growth and structural characterization of heteroepitaxial CuGaxSey layers, Proc. 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, p696.

154 A. Romeo, A.N. Tiwari, and H. Zogg
Influence of transparent conducting oxides on the properties of CdTe/CdS solar cells, Proc. 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, p1105.

153 N. Stratieva, R. Stefanov, G. Pchelarov, M.Stoev, A. Katersk, M. Igalson, and A. N. Tiwari
Investigations of chemically modified CdTe surfaces for improved back contact formation,, Proc. 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, 6-10 July 1998, p1035.

152 Book chapter: Hans Zogg, A. Ishida,
"IV-VI (lead chalcogenide) infrared sensors and lasers", in "Electronic Materials Series", Vol. 8, "Infrared Detectors and Emitters, Materials and Devices", P. Capper, C.T. Elliott, eds., Kluwer Academic Publ., 2000, pp. 43-75.

151    S. Schön, H. Zogg, U. Keller
Growth of Novel Broadband High Reflection Mirrors by Molecular Beam Epitaxy
J. Crystal Growth 201-202, pp. 1020-1023 (1999)

150    H. Zogg, C. Paglino, J. John, P. Müller, K. Alchalabi
Photovoltaic lead-chalcogenide on silicon infrared focal plane arrays
Atti della Fondazione Giorgio Ronchi, Anno, 1998 , 12 pages, (Proc. IVth int. workshop on "Advanced Infrared Technology and Applications", Firenze, Italy, 15/16 Sept. 1997, invited)

149    J. John and H. Zogg
Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates
J. Appl. Phys. 85 (1999), pp. 3364-3366.

148 Book chapter: G. Springholz, Z. Shi, H. Zogg, in
"Heteroepitaxy: Thin Film Systems", Eds. W.K. Liu and M.B. Santos,
Ch. 14, pp. 621-688, (World Scientific Publishing, Singapore, 1999).

147
 

1998

146    M. Krejci, A. N. Tiwari, H. Zogg, M. Döbeli, V. Zelezny, J. Oswald, V. Vorlicek
Epitaxial CuIn_xSe_y layers of improved crystal quality and determination of the crystal orientation with Raman spectroscopy
Inst. Phys. Conf. Ser. No. 152 (1998), 377

145    M. J. Furlong, D. Lincot, M. Froment, R. Cort_s, M. Krejci, A. N. Tiwari, H. Zogg
Heteroepitaxial growth of chemical bath deposited CdS on single crystal CuIn_xSe_y substrates Proceedings of 14th European PV solar energy conference, Barcelona (1997), 1291

144    M. J. Furlong, M. Froment, M. C. Berhard, R. Cort_s, A. N. Tiwari, M. Krejci, H. Zogg, D. Lincot
Aqueous solution epitaxy of CdS layers on CuInSe₂
J. Cryst. Growth, 193 (1998), 114

143    A. N. Tiwari, F.-J. Haug, H. Zogg
Dünnschichtsolarzellen aus Verbindungshalbleitern
VSE Bulletin 89(10) (1998), 45

142    Z. Shi, H. Zogg, U. Keller,
Thick Crack-Free CaF₂ Epitaxial Layer on GaAs (100) Substrate by Molecular Beam Epitaxy
J. Electronic Mat. 27, 1998, pp. 55-58

141    H. Zogg, J. John
Lead chalcogenide on silicon infrared sensor arrays
OPTO-ELECTRONICS REVIEW 6(1), 1998, 37-46 (invited)
 

1997

140    H. Zogg
Properties of epitaxial PbSnSe-on-Si infrared devices
Physics of semiconductor devices Vol. II, pp. 768-773, V. Kumar, S.K. Agarval, eds., Narose Publishing House New Delhi,.. London, 1998 (Proc. of the Ninth International Workshop on Physics of Semiconductor Devices, Dec 16-20 1997, Delhi, India) (invited).

139  M. Krejci, A. N. Tiwari, H. Heinrich, P. Schwander, H. Zogg and G. Kostorz,
Rotational twinning in heteroepitaxial CuInSe₂ layers on (111) oriented Si substrates.
J. Appl. Phys. 8, no.9, 1997, pp. 6100-6106.

138  A.N. Tiwari, M. Krejci, H. Zogg,
Microstructural Characterization of Heteroepitaxial CuInSe₂ and CuIn₃Se₅ layers.
Technical Digest International PVSEC-9, Miyazaki, Japan, 1996, pp. 763-764.

137  D. Lincot^*, M. Furlong^*, M. Froment^#, M.C. Bernard^#, R. Cortes^#,  A.N. Tiwari, M. Krejci, H. Zogg,
Heteroepitaxy of chemical bath deposited CdS on single crystal CuInSe₂/Si substrates.
Technical Digest International PVSEC-9, Miyazaki, Japan, 1996, pp. 599-600.
^* Ecole Nationale Superieure de Chimie, Paris
^# Universite Pierre et Marie Curie, Paris

136  P. Müller, H. Zogg, A. Fach, J. John, C. Paglino, A.N. Tiwari, M. Krejci, G. Kostorz^*,
Reduction of threading dislocation densities in heavily lattice mismatched PbSe on Si(111) by glide.
Phys. Rev. Lett. 78, Nr. 14, pp. 3007-3010.
^*Institute of Applied Physics, ETH-Hönggerberg, CH-8093 Zürich, Switzerland

135  A. Fach, J. John, P. Müller, C. Paglino, and H. Zogg,
Material properties of Pb_1-xSn_xSe epilayers on Si and their correlation with the performance of infrared photodiodes.
Journal Electronic Materials 26, 7, 1997, pp. 873-877.
 

1996

134  H. Zogg, A. Fach, J. John, P. Müller, C. Paglino, A.N. Tiwari,
Pb_1-xSn_xSe-on-Si: Material and IR-device properties.
Proc. SPIE 3182, pp. 26-29, Ukrainian Chapter, International Conference "Material Science and Material Properties for Infrared Optoelectronics", 30 Sept. - 2 Oct. 1996, Uzhgorod, Ukraine, invited talk

133  C. Paglino, A. Fach, J. John, P. Müller, H. Zogg and D. Pescia^* ,
Schottky-barrier fluctuations in Pb1-xSnxSe infrared sensors.
Journal Applied Physics 80, (15 Dec) 1996, pp. 7138-7143.
^* Lab. for Solid State Physics, Swiss Federal Institute of Technology, CH-8093 Zürich

132  Z. Shi, H. Zogg, P. Müller, I.D. Jung, U. Keller,
Wide Bandwidth (100) GaAs/Fluorides Quarter-Wavelength Bragg Reflectors by Molecular Beam Epitaxy.
Appl. Phys. Lett. 69, (2 Dec.) 1996, pp. 3474-3476.

131  H. Zogg, A. Fach, J. John, P. Müller, C. Paglino,
PbSnSe-on-Si infrared technique: Improvements in materials and devices.
Proc. SPIE 2816 (Int. Symp. on Optical Science, Engineering, and Instrumentation, "Infrared Detectors for Remote Sensing: Physics, Materials, Devices", Denver, CO, 4-9 August 1996, Invited talk), pp. 42-45.

130  H. Zogg,
Der Chip mit der Infrarotkamera.
Schweizerischer Maschinenmarkt SMM 18, 1. Mai 1996, S. 84-85.

129  P. Müller, A. Fach, J. John, A.N. Tiwari, H. Zogg, G. Kostorz^* ,
Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer
J. Appl. Phys. 79, 1996,  pp. 1911-1916.
^*Institute of Applied Physics, ETH-Hönggerberg, CH 8092 Zürich.

128  M. Krejci, A.N. Tiwari, A. Bitz^#, S. Gürtler^#, K. Kessler, V. Zelezny^*, H. Zogg,
Structural and optoelectronic properties of heteroepitaxial CuInSe₂ and CuIn₃Se₅ layers.
Proc. 13th European Photovoltaic Solar Energy Conference,  Nice, Oct. 1995, pp. 2039-2042.
^# Institut de physique appliquée, Ecole Polytechnique Lausanne, Switzerland.
^* Institut of physics, CAS, Na Slovance, Prague, Czech Republic.

127  A.N. Tiwari, K. Kessler, V. Vorlicek^*, V. Zelezny^*, M. Krejci, S. Blunier, H. Zogg,
Characterization of high vacuum evaporated CdTe/CdS layers and solar cells.
Proc. 13th European Photovoltaic Solar Energy Conference, Nice, Oct. 1995, pp. 2051-2054.
^* Institut of physics, CAS, Na Slovance, Prague, Czech Republic.

126  A.N. Tiwari, S. Blunier, D. Schmid^*, H.W. Schock^*, V. Vorlicek^#, V. Zelezeny^#, M. Krejci, H. Zogg,
Properties of heteroepitaxial CuInxSey layers on Si substrates.
Crystal Research and Technology 31, pp. 477-481 , 1996 (10th International Conference on Ternary and multinary Compounds).
^* IPE, University of Stuttgart, Germany
^# Institut of physics, CAS, Na Slovance, Prague, Czech Republic

125  H. Zogg, A. Fach, J. John, J. Masek, P. Müller, C. Paglino, W. Buttler,
Pb_1-xSn_xSe-on-Si LWIR sensor arrays and thermal imaging with JFET/CMOS read-out.
1995 U.S. workshop on the physics and chemistry of mercury cadmium tellluride and other IR materials, 10-12 October 1995, Baltimore, Maryland, J. Electron. Mat. 25, 1996, pp. 1366-1370.

124  C. Paglino, A. Fach,  J. John, J. Masek, P. Müller, H. Zogg, W. Buttler,
Pb_1-x Sn_xSe-on-Si IR-Sensor Arrays and application for LWIR thermal imaging.
Proc. IIId Int. Workshop on Advanced Infrared Technology and applications, Sept. 19-20, 1995, Capri, Italy, Atti della Fondazione Giorgio Ronchi Anno LI, N. 1-2, Jan-April 1996, pp. 71-83.

123  J. John, A. Fach, J. Masek, P. Müller, C. Paglino and H. Zogg,
IR-sensor array  fabrication in Pb_1-xSn_xSe-on-Si heterostructures.
Int. Symp. on "Si-Heterostructures: From Physics to Devices", Heraklion, Crete, Greece, 11-14 Sept. 95, Appl. Surf. Sci. 102, 1996, pp. 346-349.

122  P. Müller, A. Fach, J. John, J. Masek, C. Paglino and H. Zogg,
Properties of epitaxial Pb_1-xSn_xSe on CaF₂ covered Si(111) substrates.
Int. Symp. on "Si-Heterostructures: From Physics to Devices", Heraklion, Crete, Greece, 11-14 Sept. 95, Appl. Surf. Sci. 102, 1996, pp. 130-133.
 

1995

121  Hans Zogg, Jürg Masek, Alexander Fach, Joachim John, Werner Buttler^#
Pb_1-xSn_xSe-on-Si LWIR thermal imaging system
Proc. SPIE 2552, (SPIE Int. Symp. on Optical Science, Engineering, and Instrumentation, Infrared Technology and Sensors XXI, San Diego CA, 9-14 July 1995), pp. 404-410.
^#Ingenieur-Büro, Eschenburg 55, D-45276 Essen, Germany.

120  Hans Zogg, Peter Müller, Alexander Fach, Joachim John, Carmine Paglino,
Epitaxy of narrow gap IV-VI materials on Si(111) and Si(100)-substrates: Growth, properties and thermal mismatch strain accommodation.
Proc. SPIE 2554, 1995, (Int. Symp. on Optical Science, Engineering, and Instrumentation, Growth and Characterization of Materials for Infrared Detectors, San Diego CA, 9-14 July 1995), pp. 35 - 42.

119  A. Fach, J. John, J. Masek, P. Müller, C. Paglino, H. Zogg,
Epitaxial Pb blocking contact on Pb1-xSnxSe/CaF2/Si(111) for photovoltaic IR-detectors,
in "Semiconductor Heteroepitaxy", R.L. Aulombard, ed.,World Scientific 1995 (Int. Conf. on Compound Semiconductor Heteroepitaxy, Montpellier, F, July 1995), pp. 294-297.

118  J. Masek, A. Fach, J. John, P. Müller, C. Paglino, and H. Zogg, W. Buttler^*,
Thermal imaging camera with linear Pb_1-xSn_xSe-on-Si infrared sensor array and combined JFET/CMOS read-out electronics.
Nucl. Instr. Methods A377, 1995 , pp. 496-500 (Proceedings New Developments in Radiation Detectors, 7th  European Symposium on Semiconductor Detectors, Schloss Elmau, Germany, May 7-10, 1995).
^*Ingenieur-Büro, Eschenburg 55, D-4300 Essen 14.

117  Hans Zogg, Alexander Fach, Joachim John, Jürg Masek, Peter Müller, Carmine Paglino, Stefan Blunier,
Photovoltaic IV-VI on Si infrared-sensor arrays for thermal imaging.
Opt. Engineering 34, July 1995, special "Swiss Optics" issue, pp. 1964-1969.

116  P. Müller, A.N. Tiwari, Hans Zogg,
Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer.
Mat. Res. Soc. Symp. Proc. 379, 1995 (MRS Spring meeting, April 1995, San Francisco USA), pp. 133-136.

115  Hans Zogg, P. Müller, A. Fach,
Thermal mismatch strain relaxation mechanisms and hysteresis in PbSe-on-CaF₂/Si Structures.
Mat. Res. Soc. Symp. Proc. 379, 1995 (MRS Spring meeting, April 1995, San Francisco USA), pp. 27-32.

114  H. Zogg, A. Fach, J. John, J. Masek, P. Müller, C. Paglino,
Epitaxy of IV-VI materials on Si with fluoride buffers and fabrication of IR-sensor arrays.
Institute of Physics Conference Series 144, 1995, pp. 160-166 (Proc. 7th Int. conf. on Narrow Gap Semiconductors, 8-12 Jan 1995 Santa Fe NM, invited).
 

1994

113  A. Rogalski^*, R. Ciupa^*, H. Zogg,
Computer Modeling of Carrier Transport in Binary Lead Salt Photodiodes
Proc. SPIE Vol. 2373, 1994,
^*Institute of technical Physics WAT, Warsaw, Poland.

112  A. Rogalski^*, R. Ciupa^*, H. Zogg,
Computer Modeling of Carrier Transport in PnSnSe Photodiodes.
Infrared Phys. Technol. 35, No. 7, 1994, pp. 837-845.
^*Institute of technical Physics WAT, Warsaw, Poland

111  S. Blunier, A.N. Tiwari, K. Kessler, and H. Zogg,
Heteroepitaxy CuInSe2 on Si and PbSe/CaF2/Si substrates
Proc. 1st World Conf. Photovoltaic energy conversion, Hawaii, Dec. 5-9, 1994, pp. 242-245.

110  K. Kessler, A.N. Tiwari, S. Blunier, and H. Zogg,
Growth of epitaxial CdTe/CdS heterostructures for single crystal thin film solar cell application.
Proc. 1st World Conf. Photovoltaic energy conversion, Hawaii, Dec. 5-9, 1994, pp. 323-326.

109  A.N. Tiwari, S. Blunier, M. Filzmoser^*, H. Zogg, D. Schmid^#, and H.W. Schock^#,
Characterization of heteroepitaxial CuIn₃Se₅ and CuInSe₂ layers on Si substrates.
Appl. Phys. Lett. 65, 26. Dec. 1994, pp. 3347-3349.
^* Lab. für Festkörperphysik, ETH-Zürich.
^# Institut für phys. Elektronik, Universität Stuttgart.

108  S. Blunier, K. Kessler, V. Zelezny^*, and H. Zogg,
Direct growth of heteroepitaxial CuInSe2 layers on Si substrates, A.N. Tiwari.
Appl. Phys. Lett. 65, 31. Oct. 1994, pp. 2299-2301.
^* Lab. für Festkörperphysik, ETH-Zürich.

107  H. Zogg, A. Fach, J. John, J. Masek, P. Müller, C. Paglino,
"Photovoltaic Pb_1-xSn_xSe-on-Si IR-sensor arrays for thermal imaging".
Extended Abstracts of the 1994 int. conf. on solid state materials and devices, 1995, (SSDM 94), Aug. 23-26, 1994, Yokohama, Japan, pp. 963-964.

106  H. Zogg, S. Teodoropol,
Thermal Mismatch Strain Relaxation of Epitaxial IV-VI/Si(111) Structures on Multiple Temperature Cycling to Cryogenic Temperatures.
J. Crystal Growth 150, 1995, pp. 1186-1189.

105  H. Zogg, A. Fach, J. John, J. Masek, P. Müller, C. Paglino,
"Photovoltaic Pb_1-xSn_xSe-on-Si IR-sensor arrays for thermal imaging".
Wiss. Zeitschrift TU Dresden 43, 1994, pp. 8-12. (4. Fachtagung Infrarot-Sensoren und Systeme, 12.-13. Sept. 1994, Dresden, Hauptvortrag).

104  H. Zogg, S. Blunier, A. Fach, C. Maissen, P. Müller, S. Teodoropol^*, V. Meyer^*, G. Kostorz^#, A. Dommann^%, T. Richmond^&,
Thermal mismatch strain relaxation in epitaxial CaF₂, BaF₂/CaF₂ and PbSe/BaF₂/CaF₂ layers on Si(111), and after many temperature cycles.
Phys. Rev. B50, 15 Oct. 1994, pp. 10801-10810.
^*Physics Institute, University of Zürich, CH-8057 Zürich.
^#Institute of Applied Physics, ETH Hönggerberg, CH-8093 Zürich.
^%Neutechnikum Buchs, CH-9470 Buchs.
^&Institute of Physics, University of Basel, CH-4056 Basel.

103  A.N. Tiwari, S. Blunier, H. Zogg, V. Zelezny, D. Schmid, and H.W. Schock,
Growth of heteroepitaxial CuInSe₂ layers on Si substrates with SrF2 buffer layer.
Proceedings of the 12th European Photovoltaic Solar Energy Conference, Amsterdam, 11-15 April, 1994.

102  H. Zogg, A. Fach, J. Masek, S. Blunier,
Photovoltaic lead-chalcogenide on Si IR-sensor arrays.
Optical Engineering 33, special Issue "Semiconductor Infrared detectors", invited, May 1994, pp. 1440-1449.
 

1993

101  H. Zogg, A. Fach, C. Maissen, J. Masek,
Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications.
Proc. SPIE 2021, (SPIE's Int. Symp. on Optical Applied Science and Engineering "Growth and Characterization of Materials for Infrared Detectors", 11-16 July 1993, San Diego, CA, invited), pp. 125-136.

100  A.N. Tiwari, S. Blunier, H. Zogg,
Heteroepitaxy of I-III-VI Semiconductors on Si using IIa-Fluoride Buffer Layers.
Proc. Photovoltaic cells & devices R&D contractor meeting, Portici, 25-26 march 1993 (Commission of the European Communities, Directorate-General XII, Science, Research, Development), pp. 118-119.

99  A. Fach, C. Maissen, J. Masek, S. Teodoropol, H. Zogg,
New results with IV-VI on fluoride/Si structures for IR-sensor array applications.
Proc. SPIE 1985 (EOS-SPIE Int. symp. on physical concepts and materials for novel optoelectronic device applications II, Trieste, 24-27 May 1993), 512-517.

98  A. Fach, C. Maissen, S. Teodoropol, J. Masek, H. Zogg, H. Böttner^*,
IV-VI on fluoride/Si structures for IR-sensor array applications.
Mat. Res. Soc. Symp. Proc. 299, 1993 (MRS spring 93 meeting, San Francisco, 12-16 April 1993), pp. 279-284.
^*Fraunhoferinstitut für physikalische Messtechnik, Freiburg BRD.
 

1992

 97  H. Zogg, S. Blunier, T. Hoshino, C. Maissen, J. Masek, A.N. Tiwari,
"Infrared sensor arrays with 3-12 µm cut-off wavelengths in heteroepitaxial narrow gap semiconductors on silicon substrates".
Selected papers on "Semiconductor Infrared Detectors", A. Rogalski, ed., SPIE Milestone series MS66, 1992, pp. 322-329. (Reprinted from IEEE Trans. Electron Devices 38, 5, May 1991, pp. 1110-1117).

96  J. Van Damme, J. Vermeiren, H. Zogg, J. Masek, M. Fabbricotti,
A linear monolithic IV-VI on Silicon IR detector array, Proc. ESA Symp. "Photon detectors for space instrumentation", ESA SP-356, Dec. 1992, pp. 401-404, European Space Agency, Paris.
^*IMEC vzw, B-3001 Leuven, Belgium.
^#ESA-ESTEC, NL-2200 AZ Noordwijk.

95  A.N. Tiwari, H. Zogg, S. Blunier, K. Kessler, C. Maissen, J. Masek,
Growth of heteroepitaxial CdTe layers on reusable Si substrates and a lift-off technique for thin film solar cell fabrication.
"The CdTe Thin Film Cell", Special Issue Int. Journal Solar Energy 12, 1992, pp. 187-195.

94  J. Masek, C. Maissen, T. Hoshino, H. Zogg, J. Vermeiren^*, C. Claeys^*
Monolithic photovoltaic IV-VI-on-Si infrared sensor array with integrated read-out electronics, IEEE Trans. Electron Dev. 39, 1992, p.2676 (extended abstract. DRC, Device Research Conference, Boston, MA, June 22-24 1992).
^*IMEC vzw, B-3001 Leuven, Belgium.

93  H. Zogg, C. Maissen, S. Blunier, S. Teodoropol, R.M. Overney^*, T. Richmond^*, H. Haefke^*,
Strain relaxation morphologies of IIa-fluorides and lead-chalcogenide layers on Si(111)
J. Crystal Growth 127, 1993, 668-671.
^*Institute of Physics, University of Basel, CH-4056 Basel, Switzerland.

92  A.N. Tiwari, A. Freundlich^*, B. Beaumont^*, S. Blunier, H. Zogg, S. Teodoropol^#, C. Vèrié,
Metalorganic vapor phase epitaxy of GaAs on Si using IIa-fluoride buffer layers.
J. Crystal Growth 124, 1992, 565-569.
^* Laboratoire de Physique du Solide et Energy solaire, CNRS, Valbonne 06560, France.
^# Physics Institute, University of Zürich.

91  J. Masek, T. Hoshino, C. Maissen, H. Zogg, S. Blunier, J. Vermeiren^*, C. Claeys^*,
Monolithic Lead-Chalcogenide IR-diodes on Silicon: Fabrication and use in thermal imaging applications.
"Infrared detectors: state of the art", Proc. SPIE 1735, 1992, pp. 54-61.
^*IMEC vzw, B-3001 Leuven, Belgium.

90  H. Zogg, C. Maissen, S. Blunier, S. Teodoropol, R.M. Overney1, T. Richmond¹, J.W. Tomm²,
Thermal mismatch strain relaxation mechanisms in heteroepitaxial lead-chalcogenide layers on Si-substrates.
Semicond. Sci. Technol. 8, (Jan. 1993), pp. S337-S341.
¹Institute of Physics, University of Basel, CH-4056 Basel, Switzerland.
²Humbolt University, O-1040 Berlin, Germany.

89  S. Blunier, H. Zogg, C. Maissen, A.N. Tiwari, R.M. Overney^*, H. Haefke^*, P.A. Buffat^#, G. Kostorz^$,
Lattice and thermal misfit dislocations in epitaxial CaF₂/Si(111) and BaF₂-CaF₂/Si(111) structures
Phys. Rev. Lett. 68, (Juni 1992), pp. 3599-3602.
^*Institute of Physics, University of Basel, CH-4056 Basel, Switzerland.
^#Institute for Electron Microscopy, Swiss Federal Institute of Technology EPFL, CH-1015 Lausanne, Switzerland.
^$Institute of Applied Physics, Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zürich, Switzerland.

88  A.N. Tiwari, S. Blunier, H. Zogg,
Epitaxial growth of superconducting YBa₂Cu₃O_7-x with CaF₂ intermediate buffer.
J. Appl. Phys. 71, (May 1992), pp. 5095-5098.

87  C. Maissen, H. Zogg, S. Blunier, S. Teodoropol^*, T. Richmond^#, J.W. Tomm⁺, G. Kostorz^$,
Properties and strain relaxation below room temperature of epitaxial PbSe and Pb(Te,Se) on fluoride-covered silicon substrates.
Mat. Res. Soc. Symp. Proc. 263, 1992, pp. 415-420.
^* Physics Institute, University of Zürich.
^#Institute of Physics, University of Basel, CH-4056 Basel, Switzerland.
⁺Institut für Festkörperphysik, Humbolt-Universität, O-1040 Berlin, Germany.
^$Institute of Applied Physics, ETH Hönggerberg, CH-8093 Zürich.

86  A.N. Tiwari, S. Blunier, H. Zogg,
A study of As-doping and surface reconstructions in molecular beam epitaxy grown CdTe(100) on BaF₂-CaF₂/Si(100).
Appl. Phys. Lett. 60, 5 (Feb. 1992), pp. 621-623.

85  A.N. Tiwari, H. Zogg, S. Blunier,
Heteroepitaxial CdTe layers on Si-substrates for radiation sensor arrays with integrated Si-electronics.
Nuclear Instruments and Methods A322, 1992, pp. 352-356.

1991

84  T. Hoshino, H. Zogg, C. Maissen, J. Masek, S. Blunier,
Fabrication Procedures of Lead-Chalcogenide-on-Silicon Infrared Sensor Arrays for Thermal Imaging
Microelectronic Engineering 15, 1991, pp. 293-296.

83  Ph. Lerch^*, F. Marcenaz^*, M. Dénoreaz^*, J. Weber^*, P. Martinoli^*, A.N. Tiwari, S. Blunier, H. Zogg,
Epitaxial High Tc thin film deposition on (100)Si with BaF₂/CaF₂ buffer layers.
"High T_c Superconductor Thin Films", L. Correra, ed., Elsevier science publishers B.V., 1992, pp. 677-682.(Proc. Int. Conf. Advanced Mats. ICAM 91 (E-MRS), Strasbourg F, May 1991).
^*Institut de Physique, Université de Neuchâtel.

82  S. Blunier, V. Meyer^*, R.E. Pixley^*, H. Stüssi^*, S. Teodoropol^*, H. Zogg,
Precision Measurement of Axial Channel Angles.
Nucl. Instr. Meths. B63, 1992, pp. 56-58.
^*Physics Institute, University of Zürich.

81  H. Zogg, C. Maissen, J. Masek, T. Hoshino, S. Blunier, A.N. Tiwari,
Photovoltaic Infrared Sensor Arrays in Monolithic Lead Chalcogenides on Silicon.
Semicond Sci. Technol. 6, 1991, pp. C36-C41.

80  H. Zogg, S. Blunier, T. Hoshino, C. Maissen, J. Masek, A.N. Tiwari,
Infrared sensor arrays with 3-12 µm cut-off wavelengths in heteroepitaxial narrow gap semiconductors on silicon substrates.
IEEE Trans. Electron Devices 38, 5, May 1991, pp. 1110-1117.

79  T.K. Chu^*, C. Huber^*, F. Santiago^*, A. Martinez^*, H. Zogg, S. Blunier, C. Maissen, A.P. Taylor^#, L. Schowalter^#,
Growth of PbSe on Heteroepitaxial BaF₂/Si Substrates.
Mat. Res. Soc. Symp. Proc. Vol. 221, 1991, 5 pp.
^*Naval Surface Warfare Center, Silver Spring, Maryland, USA.
^#Rensselaer Polytechnic Institute, Troy, New York, USA.

78  S. Blunier, H. Zogg, A.N. Tiwari, C. Maissen, H. Weibel, T. Hoshino, S. Teodoropol,
Low temperature growth of group II-a fluoride layers on silicon as buffer for heteroepitaxial IV-VI and II-VI compound semiconductors.
Mat. Res. Soc. Symp. Proc. Vol. 220, 1991, pp. 531-535.
MRS Spring 1991 meeting "Silicon Molecular Beam Epitaxy".

77  A.N. Tiwari, S. Blunier, K. Kessler, H. Zogg,
P-type doping in heteroepitaxial CdTe and lift-off technique for making thin film single crystal CdTe solar cells.
Proc. 10th European Photovoltaic Solar Energy Conference, 8-12 April 1991, Lisbon, Portugal, p. 1411.

76  T. Hoshino, C. Maissen, H. Zogg, J. Masek, S. Blunier, A.N. Tiwari, S. Teodoropol, W.J. Borer,
Monolithic Pb_1-xSn_xSe infrared sensor arrays on Si prepared by low-temperature processes.
Infrared Phys. 32, 1991, pp. 169-175.

1990

75  W. Floeder, A. N. Tiwari, S. Blunier, H. Zogg,
Properties of Epitaxial CdTe on Si(100) with intermediate CaF₂-BaF₂ Buffer,  Mat. Res. Soc. Extended.
Abstracts EA21, 1990, 145-148.

74  H. Zogg, C. Maissen, J. Masek, T. Hoshino, S. Blunier,
Photovoltaic infrared devices in epitaxial narrow gap lead chalcogenides on silicon substrates,
Mat. Res. Soc. Symp. Proc. Vol. 216, 1991, pp. 373-383.
(Boston, Nov 26- Dec 1, 1990, invited talk)

73a  H. Zogg, J. Masek, C. Maissen, S. Blunier, T. Hoshino,
Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range.
Proc. SPIE 1361, 1990, 1079-1085 (Int. Conf. on Physical Concepts of Materials for Novel Optoelectronic Device Applications, Aachen, 28 Oct - 2 Nov 1990).

73  H. Zogg, W. Floeder, A.N. Tiwari, S. Blunier, C. Maissen, J. Masek,
Heteroepitaxy of II-VI and IV-VI Compound Semiconductors on Si Substrates.
Proc. SPIE 1361, 1990, 406-413 (Int. Conf. on Physical Concepts of Materials for Novel Optoelectronic Device Applications, Aachen, 28 Oct - 2 Nov 1990).

72  A.N. Tiwari, W. Floeder, S. Blunier, H. Zogg, H. Weibel,
Heteroepitaxy of CdTe(100) on Si(100) with BaF₂-CaF₂(100) buffer layers.
J. Cryst. Growth 111, 1991, 730-735.

71  A.N. Tiwari, W. Floeder, S. Blunier, H. Zogg, H. Weibel,
Molecular beam epitaxial growth of (100) oriented CdTe on Si(100) using CaF₂-BaF₂ as a buffer.
Appl. Phys. Lett. 57, Sept. 1990, 1108-1110.

70  H. Zogg, C. Maissen, J. Masek, S. Blunier,
Monolithic infrared sensor arrays with 3-12 µm cut-off in heteroepitaxial narrow gap lead chalcogenides on silicon substrates.
IEE Conference Publication No 321, 1990, pp. 36-40.

69  H. Zogg, C. Maissen, S. Blunier, J. Masek, V. Meyer^*, R.E. Pixley^* ,
Properties of IV-VI narrow gap semiconductors on fluoride covered silicon.
Mat. Res. Soc. Symp. Proc. Vol. 198, 1990, "Epitaxial Heterostructures", pp. 451-456.
^* Physik Institut, University of Zürich, CH-8001 Zürich.

68  H. Zogg, C. Maissen, J. Masek, S. Blunier, T. Hoshino,
Monolithic infrared sensor arrays in heteroepitaxial narrow gap lead chalcogenides on Si for the SWIR, MWIR and LWIR range.
Proc. SPIE 1308, 1990, "Infrared Detectors and Focal Plane Arrays", pp. 169-177.

67  H. Zogg, S. Blunier, W. Floeder, C. Maissen, J. Masek, A. Tiwari,
Heteroepitaxial IV-VI and II-VI compound semiconductors on silicon with intermediate IIa-fluoride buffers: properties and applications.
Crystal Properties and Preparation 32-34, pp. 230-234, 1990.

66  A.N. Tiwari, W. Floeder, S. Blunier, H. Zogg, H. Weibel,
Single crystal thin film CdTe solar cells.
Helv. Phys. Acta 63, pp. 517-518, 1990.

65  J. Masek, A. Ishida^*, H. Zogg, C. Maissen, S. Blunier,
Monolithic photovoltaic PbS on Si infrared sensor array.
IEEE Electron Device Lett. 11, 1990, pp. 12-14.
^*Shizuoka University, Faculty of Engineering, Hamamatsu 432, Japan.

<1990

64  C. Maissen, J. Masek, H. Zogg, S. Blunier, A. Lambrecht^*, M. Tacke^* ,
Monolithic Pb_1-xSn_xSe on Si infrared sensor array for the 8-12 µm range.
ESSDERC 89, 19th European Solid State Device Research Conference Berlin, A. Heuberger, H. Ryssel, P. Lange (eds.), Springer-Verlag Berlin, 1989, pp. 381-384.
^*Fraunhofer-Institut für phys. Messtechnik, Freiburg FRG.

63  H. Zogg, C. Maissen, J. Masek, S. Blunier, A. Lambrecht^*, M. Tacke^*,
Heteroepitaxial Pb_1-xSn_xSe on Si infrared sensor array with 12 µm cutoff wavelength.
Appl. Phys. Lett. 55, 4. Sept. 1989, pp. 969-971.
^*Fraunhofer-Institut für phys. Messtechnik, Freiburg FRG.

62  W. Floeder, A.N. Tiwari, S. Blunier, H. Zogg, H. Weibel,
A novel approach for making thin film single crystal solar cells on reusable substrates.
Proceedings of the 9th European Photovoltaic Solar Energy Conf., Freiburg, BRD, 25-29 Sept 1989, pp. 157-159.

61  J. Masek, C. Maissen, H. Zogg, S. Blunier,
Monolithic heteroepitaxial infrared sensor arrays on Si for thermal imaging.
Sensors and Actuators A21-A23, (1990), pp. 461-464.

60  C. Maissen, H. Zogg, J. Masek, S. Blunier, A. Lambrecht^*, H. Böttner^*,
Monolithic infrared sensor array in heteroepitaxial Pb_1-xSn_xSe on Si with 12 µm cut-off wavelength.
IEEE Trans. Electron. Dev. 36, 1989, p. 2627, (Abstract of the Device Research Conference, Cambridge, MA, June 19-21, 1989).

59  H. Zogg, C. Maissen, J. Masek, S. Blunier, A. Lambrecht^*, M. Tacke^*,
Epitaxial lead-chalcogenide IR-sensors on Si for 3-5 µm and 8-12 µm.
Semiconductor Sci. and Tech. 5, 1990, pp. S49-S52.
^*Fraunhofer-Institut für phys. Messtechnik, Freiburg FRG.

58  H. Zogg, J. Masek, C. Maissen, S. Blunier, H. Weibel,
IV-VI compounds on fluoride/silicon heterostructures and infrared devices.
Thin Solid Films 184, 1990, 247-252.

57  S. Blunier, A. Rüegge^*, H. Zogg,
Properties of lattice mismatched IIa-fluorides on Si.
Thin Solid Films 184, 1990, 387-393.
^*Physik Institut, University of Zürich.

56  J. Masek, C. Maissen, H. Zogg, W. Platz^*, H. Riedel^*, M. Königer^*, A. Lambrecht^#, M. Tacke^#,
Photovoltaic lead-chalcogenide IR-sensor arrays on Si for thermal imaging applications.
Fifth European Symposium on Semiconductor Detectors, Munich, Feb 21-23, 1989.
Nucl. Instr. Meth. A288, 1990, pp. 104-109.
^*MBB-Apparate, München 80.
^#Fraunhofer-Institut für phys. Messtechnik, Freiburg FRG.

55  C. Maissen, J. Masek, S. Blunier, H. Zogg, H. Weibel,
Photovoltaische Infrarotsensoren auf Si-Substraten.
Helv. Phys. Acta 62, 1989, pp. 270-273.

54  S. Blunier, H. Zogg, H. Weibel,
BaF₂-SrF₂-CaF₂(100) layers on Si(100) with smooth surfaces.
Helv. Phys. Acta 62, 1989, pp. 266-269.

53  S. Blunier, H. Zogg, H.Weibel,
Growth of lattice mismatched stacked epitaxial CaF₂-SrF₂-BaF₂ layers on (100)-oriented Si substrates.
Appl. Phys. Lett. 53, 1988, pp. 1608-1610.

52  C. Maissen, J. Masek, H. Zogg, S. Blunier,
Photovoltaic infrared sensors in heteroepitaxial PbTe on Si.
Appl. Phys. Lett. 53, 1988, pp. 1512-1514.

51  J. Masek, C. Maissen, H. Zogg, S. Blunier, H. Weibel, A. Lambrecht^*, B. Spanger^*, H. Böttner^*, M. Tacke^*,
Photovoltaic infrared sensor array in heteroepitaxial narrow gap lead-chalcogenides on silicon.
Extended abstracts of 18th European Solid State Device Research Conference ESSDERC 88, Montpellier, France, 13-16 Sept. 1988.
J. de Physique 49, Colloque C4, 1988, pp.587-590.
^*Fraunhofer-Institut für phys. Messtechnik, Freiburg FRG.

50  H. Zogg, C. Maissen, J. Masek, S. Blunier,
Epitaxial lead-chalcogenides on fluoride covered silicon substrates: Properties and infrared device fabrication.
Workbook of the fifth int. conf. on molecular beam epitaxy MBE-V, Sapporo, Aug. 28-Sept. 1, pp. 314-315.
J. Crystal Growth 95, 1989, pp. 562-563.

49  H. Zogg, C. Maissen, J. Masek, S. Blunier,
Photovoltaic infrared sensor arrays in epitaxial narrow gap lead-chalcogenides on fluoride covered silicon substrates.
Extended Abstracts of the 20th (1988 international) Conf. on Solid State Devices and Materials, SSDM, Tokyo, Japan, Aug. 24-26 1988, pp. 635-636.

48  S. Blunier, H. Zogg, H. Weibel,
Epitaxial BaF₂-SrF₂-CaF₂ stacks on Si(111) and Si(100), in Heterostructures on Si: One step further with silicon, (Y.I. Nissim, E. Rosencher eds.).
NATO ASI Series E, Vol. 160, Kluwer Academic publ. 1989, pp. 329-334.

47  S. Blunier, H. Zogg, H. Weibel,
Epitaxial BaF₂-CaF₂ stacks on Si(111) and Si(100).
Mat. Res. Soc. Symp. Proc. 116, 1988, pp. 425-430.

46  S. Blunier, H. Zogg, H. Weibel,
Epitaktische BaF₂-SrF₂-CaF₂ Stapel auf Si(111) und (Si(100).
Helv. Phys. Acta 61, 1988, pp. 873-876.

45  H. Zogg, S. Blunier, J. Masek,
Progress in Compound-Semiconductor-on-Silicon Heteroepitaxy with Fluoride Buffer Layers.
Proc. 2nd Int. Symposium on Silicon Molecular Beam Epitaxy, Oct. 20-23, 1987, Honolulu, Hawaii (invited); J.C. Bean, L. Schowalter, editors, Electrochemical Society, Proc. Vol. 88-8, pp. 321-330.
J. Electrochem. Soc. 136, 1989, pp. 775-779.

44  H. Zogg,
Heteroepitaxy of semiconductors and insulating group IIa-fluorides.
Habilitationsschrift ETH Zürich, Sept. 1987; Habilitation 1. Okt. 1988.

43  H. Zogg,
Heteroepitaxie auf Silizium für neuartige integrierte Schaltungen und Sensoren.
Neue Zürcher Zeitung, Beilage Forschung und Technik, Nr. 121, 27. Mai 1987, S. 109.

42  H. Zogg, S. Blunier,
Properties of epitaxial CdTe on Si(111) with a (Ca,Ba)F₂ buffer layer.
Mat. Res. Soc. Symp. Proc. 91, "Heteroepitaxy on Silicon Technology", 1987, pp. 375-380.

41  H. Zogg, S. Blunier,
Properties of graded group IIa fluoride buffer layers for semiconductor heteroepitaxy.
Appl. Surf. Sci. 30, 1987, pp. 402-407.

40  H. Zogg, S. Blunier,
Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F₂ buffer layer.
Appl. Phys. Lett. 49 (22), 1986, pp. 1531-1533.

39  H. Zogg,
Spannungsrelaxation in epitaktischem (Ca,Ba)F₂ auf Si.
Helv. Phys. Acta 60, 1987, 201-204.

38  H. Zogg, P. Maier, H. Melchior,
Graded IIa-Fluoride buffer layers for heteroepitaxy of lead-chalcogenides and CdTe on Si (extended abstract, Fourth int. conf. on molecular beam epitaxy, York UK, Sept 7-10, 1986).
J. Cryst. Growth 81, 1987, pp. 543-544.

37  H. Zogg, P. Maier, H. Melchior,
Graded IIa-Fluoride buffer layers for heteroepitaxy of lead-chalcogenides and CdTe on Si.
J. Cryst. Growth 80, 1987, pp. 408-416.

36  H. Zogg,
Strain relief in epitaxial fluoride buffer layers for semiconductor heteroepitaxy.
Appl. Phys. Lett. 49 (15), 1986, pp. 933-935.

35  M. Wittmer^*, D.A. Smith^*, A. Segmüller^*, H. Zogg, H. Melchior,
Characterization of epitaxial (Ca,Ba)F₂ films on Si(111) substrates.
Appl. Phys. Lett. 49 (14), 1986, pp. 898-900.
^*IBM Yorktown Heigths NY.

34  H. Zogg, H. Melchior,
Epitaktisches Wachstum von CdTe auf Si mittels IIa-Fluorid Zwischenschicht.
Helv. Phys. Acta 59, 1986, pp. 1021-1023.

33  H. Zogg, W. Vogt, H. Melchior,
Growth of heteroepitaxial lead chalcogenide infrared detector arrays on fluoride covered Si substrates.
Mat. Res. Soc. Symp. Proc. 71, 1986, pp. 87-95.

32  H. Zogg, W. Vogt, H. Melchior,
Heteroepitaxial IV-VI infrared sensors on Si-substrates with fluoride buffer layers.
Nucl. Instr. Methods A253, 1987, pp. 418-422.

32  H. Zogg, P. Maier, P. Norton^*,
MBE growth of non-lattice matched (Ba,Ca)F₂, (Pb,Sn)Se/(Ba,Ca)F₂ and CdTe/(Ba,Ca)F₂ on Si substrates
Mat. Res. Soc. Symp. Proc. 56, "Layered Structures and Epitaxy", pp. 253-258.
^*Fraunhoferinstitut für phys. Messtechnik, Freiburg, Germany.

31  H. Zogg, P. Norton^*,
Heteroepitaxial PbTe-Si and (Pb,Sn)Se-Si structures for monolithic 3-5 and 8-12 µm infrared sensor arrays.
Technical Digest, International Electron Devices Meeting IEDM, Washington D.C., Dec. 1985, pp. 121-124.
^*Fraunhoferinstitut für phys. Messtechnik, Freiburg, Germany.

30  H. Zogg, W. Vogt, H. Melchior,
Growth and applications of heteroepitaxial narrow gap IV-VI infrared detectors on silicon.
Proc. SPIE 587, "Optical Fibre Sources and Detectors", pp. 170-179.

29  H. Zogg, P. Norton^*,
Epitaktische IV-VI-Schmalbandhalbleiter-Schichten auf Si für IR-Sensorsysteme.
Helv. Phys. Acta 59, 1986, pp. 168-171.
^*Fraunhoferinstitut für phys. Messtechnik, Freiburg, Germany.

28  H. Zogg, M. Hüppi, P. Maier, R. Knobel^*,
Charakterisierung von MBE-(Ca,Ba)F₂ Schichten auf Si mittels Rutherford Backscattering Spektroskopie (RBS).
Helv. Phys. Acta 59, 1986, pp. 164-167.
^*Universität Zürich.

27  H. Zogg, P. Maier, M. Ospelt,
A note on the epitaxial relationships of the BaF₂/Si(111) heterostructure.
Thin solid films 129 (3/4), 1985, pp. 329-333.

26  H. Zogg, M. Hüppi,
Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F₂ buffer layer.
Appl. Phys. Lett. 47 (2), 1985, pp. 133-135.

25  W. Vogt, H. Zogg, H. Melchior,
Preparation and properties of epitaxial PbSe/BaF₂/PbSe structures.
Infrared Phys. 25 (4), 1985, pp. 611-614.

24  H. Zogg, W. Vogt, H. Melchior,
Heteroepitaktische Schmalbandhalbleiterstrukturen auf Silizium für Anwendung in IR-Sensorsystemen.
Bull. SEV/VSE 76 (5), 1985, pp. 285-288.

23  H. Zogg, W. Vogt, H. Melchior,
MIS capacitors on BaF₂/PbSe layers and epitaxial Si/BaF₂/PbSe structures for IR-detection.
Infrared Phys. 25 (1/2), 1985, pp. 333-336.

22  H. Zogg, W. Vogt,
Heteroepitaktische Si - Schmalbandhalbleiterstrukturen und Anwendung in IR-Sensorsystemen.
Helv. Phys. Acta 57, 1984, pp. 778-780.

21  W. Vogt, H. Zogg,
Herstellung von PbSe/BaF₂/PbSe Mehrfachschichten.
Helv. Phys. Acta 57, 1984, pp. 776-778.

20  H. Zogg, W. Vogt, H. Melchior,
MIS capacitors on PbSe for IR-detection.
Proc. third int. conference on infrared physics CIRP III, Zürich, July 1984.
W. Rüegsegger and F. K. Kneubühl, eds., pp. 377-379.

19  H. Zogg, W. Vogt, H. Melchior,
Epitaxial growth of BaF₂ films onto PbSe and electronic properties of the interface.
Appl. Phys. Lett. 45 (3), 1984, pp. 286-288.

18  H. Zogg, W. Vogt,
Epitaktisches Wachstum und MIS-Verhalten von BaF₂ auf PbSe.
Helv. Phys. Acta 57, 1984, pp. 536-538.

17  H. Zogg, W. Vogt, W. Baumgartner,
Carrier recombination in single crystal PbSe.
Solid State Electron. 25 (12), 1982, pp. 1147-1155.

16  H. Zogg, W. Vogt, W. Baumgartner,
Ladungsträgerlebensdauern in epitaktischen PbSe-Schichten,
Helv. Phys. Acta 54, 1981, pp. 624-626.